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 Product Bulletin OPB819 November 2000
Slotted Optical Switch
Type OPB819
Features *Non-contact switching *24"wire leads *1.25"(32 mm) wide slot *1.38"(35 mm) deep slot Description
The OPB819 consists of an infrared emitting diode and NPN silicon phototransistor mounted in a plastic houising on opposite sides of a 1.25" (31.75 mm) wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40C to +80C Input Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Photosensor Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
NOTES: (1) Derate linearly 1.67 mW/C above 25C. (2) All parameters tested using pulse technique. Precautions: Exposure of the plastic body to chlorinated hydrocarbons and ketones such as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents methanol and isopropanol are recommended. Spray or wipe do not submerge.
Visit our website at www.optekinc.com or email us at sensors@optekinc.com
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
Type OPB819
Electrical Characteristics (TA = 25C unless otherwise noted)
SYMBOL
Input Diode VF IR V(BR)CEO V(BR)ECO I CEO Coupled VCE(SAT) IC(ON)
PARAMETER
Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Emitter Saturation Voltage On-State Collector Current
MIN MAX UNITS
1.8 100 30 5.0 100 0.40 100 V A V V nA V A IF = 20 mA VR = 2.0 V
TEST CONDITIONS
Output Phototransistor IC = 100 A, I F = 0, Ee = 0 IE = 100 A, I F = 0, Ee = 0 VCE = 10.0 V, I F = 0, Ee = 0 IC = 250 A, I F = 40 mA VCE = 5.0 V, IF = 40 mA
Optek re serves the right to make changes at any time in order to im prove design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396


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